The purpose of this project is to design, build, and test a single state Pseudomorphic High Electron Mobility Transistor (PHEMT) Low-Noise-Amplifier (LNA) at 2GHz having a gain of 16 dB and noise figure of less than or equal to 0.4 dB.
http://www.engr.sjsu.edu/rkwok/projects/LNA2.PDF