The purpose of this project is to design, build, and test a single state Pseudomorphic High Electron Mobility Transistor (PHEMT) Low-Noise-Amplifier (LNA) at 2GHz having a gain of 16 dB and noise figure of less than or equal to 0.4 dB.
The transistor used in this design is FHX35X. Impedance matching networks at the input and output are designed to give low-figure and desired gain respectively. The low-noise amplifier is designed in the hybrid Microwave Integrated Circuit form on a 50 Ohms substrate.
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