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SiC/GaN Poised for Power

SiC/GaN Poised for Power

by R. Colin Johnson @ eetimes.com:

PORTLAND, Ore.—Today Yole Development predicted that power transistors would radically shift from silicon wafers to silicon carbide (SiC) and gallium nitride (GaN) substrates—to achieve higher power in smaller spaces, according to its GaN and SiC Devices for Power Electronics Applications report.

One of the big drivers behind the shift is the electric vehicle (EV) and hybrid electric vehicle (HEV) industries, which Yole predicts will be majorly pushing the SiC technology to minimize the size of the power electronics using them.

SiC/GaN Poised for Power – [Link]

The post SiC/GaN Poised for Power appeared first on Electronics-Lab.

 




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